Document
PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads
G E
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
Benefits
n-channel
Applications
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing Induction cooking systems Microwave Ovens Resonant Circuits
TO-247AD
Parameter Max.
1200 41 21 82 82 10 40 ±20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf in (1.1N m)
Absolute Maximum Ratings
Units
V A VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ Tc = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load current
Ã
d
Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Storage Temperature Range, for 10 sec. Mounting Torque, 6-32 or M3 screw
V W
°C
y
y
Thermal / Mechanical Characteristics
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
––– ––– ––– ––– –––
Typ.
––– ––– 0.24 ––– 6 (0.21)
Max.
0.77 2.5 ––– 40 –––
Units
°C/W
g (oz.)
www.irf.com
1
9/17/03
IRG4PH40UD2-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)ECS Emitter-to-Collector Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
eà 1200
18 — — — — 3.0 — 16 — — — — —
Min. Typ. Max. Units
— — 0.43 2.43 2.97 2.47 — -11 24 — — 3.4 3.3 —
Conditions
VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
f
— V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1mA IC = 21A VGE = 15V 3.1 V IC = 41A — See Fig.2, 5 IC = 21A, TJ = 150°C — VCE = VGE, IC = 250µA 6.0 — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 21A 250 µA VGE = 0V, VCE = 1200V VGE = 0V, VCE = 1200V, TJ = 150°C 5000 3.8 V IF = 10A See Fig.13 IF = 10A, TJ = 150°C 3.7 ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf ETS LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (t.