IGBT Module / Silicon N Channel IGBT
IGBT MODULE
MBN400C33A
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (...
Description
IGBT MODULE
MBN400C33A
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70°C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. * Isolated head sink (terminal to base).
E E G C
2-M8 2-M4
4-φ5.8
TERMINALS Weight: 720 (g)
ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W °C °C VRMS N.m
MBN400C33A
3,300 ±20 400 800 400 800 4,000 -40 ~ +125 -40 ~ +125 5,400(AC 1 minute) 2/10 2.8
DC 1ms DC 1ms
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M5)
33.4
*High reliability,high durability module.
(1) (2)
Notes: (1)Recommended Value 1.8±0.2/9±1N.m
(2)Recommended Value 2.6±0.2N.m
CHARACTERISTICS Item
(Tc=25°C ) Symbol
I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr
Unit
mA nA V V nF
Min.
4.0 -
Typ.
4.5 5.5 50 1.6 2.3 2.1 3.4 3.0 0.5
Max.
4.0 ±200 5.5 7.0 2.6 3.2 2.8 5.3 4.0 0.9
Test Conditions
Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time
V...
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