S9018LT1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) 1. 0 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) VCE(sat) VBE(sat) 0. 95 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 2. 4 1. 3 2. 9 1. 9 0. 95 Unit: mm unless otherwise specified) Test conditions MIN 25 18 4 0.1 0.1 0.1 70 190 0.5 1.4 V V TYP MAX UNIT V V V Ic= 100µA, IE=0 Ic= 0.1mA, IB=0 IE=100µA, IC=0 VCB=20V, IE=0 VCE=15V, IB=0 VEB= 3V, IC=0 VCE=5V, IC= 1mA IC=10mA, IB= 1mA IC=10mA, IB= 1mA VCE=5V, IC= 5mA 0. 4 µA µA µA Transition frequency fT f=400MHz 600 MHz DEVICE MARKING S9018LT1= J8 ...