MRF10120

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10120/D The RF Line Microwave Long Pulse Power Transistor Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 7.6 dB Min., 8.5 dB (Typ) 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR Hermetically Sealed Industry Standard Package Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Internal Input and Output Matching for Broadband Operation MRF10120 120 W (PEAK), 960–1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON CASE 355C–02, STYLE 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Peak (1) Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C Storage Temperature Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 55 55 3.5 15 380 2.17 –65 to +200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.46 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Curr...