CA3127

CA3127 August 1996 High Frequency NPN Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Each of the completely isolated transistors exhibits low 1/f noise and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 500MHz. Access is provided to each of the terminals for the individual transistors and a separate substrate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 provides close electrical and thermal matching of the five transistors. Features Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz Five Independent Transistors on a Common Substrate Applications VHF Amplifiers Multifunction Combinations - RF/Mixer/Oscillator Sense Amplifiers Synchronous Detectors VHF Mixers Ordering Information PART NUMBER (BRAND) CA3127E TEMP. RANGE (oC) -55 to 125 -55 to 125 PKG. NO. E16.3 M16.15 PACKAGE 16 Ld PDIP 16 Ld SOIC IF Converter IF Amplifiers Synthesizers Cascade Amplifiers CA3127M (3127) CA3127M96 (3127) -55 to 125 16 Ld SOIC Tape and Reel M16.15 Pinout CA3127 (PDIP, SOIC) TOP VIEW 1 2 Q2 3 4 Q1 16 15 14 13 Q5 12 11 SUBSTRATE 5 6 Q3 7 8 Q4 10 9 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-...