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Transistor Array. CA3127 Datasheet

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Transistor Array. CA3127 Datasheet






CA3127 Array. Datasheet pdf. Equivalent






CA3127 Array. Datasheet pdf. Equivalent


CA3127

Part

CA3127

Description

High Frequency NPN Transistor Array



Feature


CA3127 August 1996 High Frequency NPN T ransistor Array Description The CA3127 consists of five general purpose silic on NPN transistors on a common monolith ic substrate. Each of the completely is olated transistors exhibits low 1/f noi se and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 50 0MHz. Access is provided to each of the terminals for the i.
Manufacture

Intersil

Datasheet
Download CA3127 Datasheet


Intersil CA3127

CA3127; ndividual transistors and a separate sub strate connection has been provided for maximum application flexibility. The monolithic construction of the CA3127 p rovides close electrical and thermal ma tching of the five transistors. Featu res • Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz • P ower Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz .


Intersil CA3127

• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz • Five Independent Transistors on a Common Su bstrate Applications • VHF Amplifie rs • Multifunction Combinations - RF/ Mixer/Oscillator • Sense Amplifiers • Synchronous Detectors • VHF Mixer s Ordering Information PART NUMBER (BR AND) CA3127E TEMP. RANGE (oC) -55 to 12 5 -55 to 125 PKG. NO. E16.3 M16.15 .

Part

CA3127

Description

High Frequency NPN Transistor Array



Feature


CA3127 August 1996 High Frequency NPN T ransistor Array Description The CA3127 consists of five general purpose silic on NPN transistors on a common monolith ic substrate. Each of the completely is olated transistors exhibits low 1/f noi se and a value of fT in excess of 1GHz, making the CA3127 useful from DC to 50 0MHz. Access is provided to each of the terminals for the i.
Manufacture

Intersil

Datasheet
Download CA3127 Datasheet




 CA3127
CA3127
August 1996
High Frequency NPN Transistor Array
Features
Description
• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
Applications
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
The CA3127 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
completely isolated transistors exhibits low 1/f noise and a
value of fT in excess of 1GHz, making the CA3127 useful
from DC to 500MHz. Access is provided to each of the termi-
nals for the individual transistors and a separate substrate
connection has been provided for maximum application flexi-
bility. The monolithic construction of the CA3127 provides
close electrical and thermal matching of the five transistors.
Ordering Information
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
• IF Converter
• IF Amplifiers
• Synthesizers
• Cascade Amplifiers
PART
NUMBER
(BRAND)
TEMP.
RANGE (oC)
PACKAGE
PKG.
NO.
CA3127E
-55 to 125 16 Ld PDIP
E16.3
CA3127M
(3127)
-55 to 125 16 Ld SOIC
M16.15
CA3127M96 -55 to 125 16 Ld SOIC Tape and Reel M16.15
(3127)
Pinout
CA3127
(PDIP, SOIC)
TOP VIEW
1
Q1
2
Q2
3
4
SUBSTRATE 5
6
Q3
7
8
16
15
14
13
Q5
12
11
Q4
10
9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
5-1
File Number 662.3




 CA3127
CA3127
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . 20V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θJA (oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Power Dissipation, PD (Any One Transistor). . . . . . 85mW
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con-
nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. θJA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications TA = 25oC
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNITS
DC CHARACTERISTICS (For Each Transistor)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown-Voltage
Emitter-to-Base Breakdown Voltage (Note 3)
Collector-Cutoff-Current
Collector-Cutoff-Current
DC Forward-Current Transfer Ratio
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Magnitude of Difference in VBE
Magnitude of Difference in IB
DYNAMIC CHARACTERISTICS
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IC1 = 10µA, IB = 0, IE = 0
IE = 10µA, IC = 0
VCE = 10V IB = 0
VCB = 10V, IE = 0
VCE = 6V
IC = 5mA
IC = 1mA
IC = 0.1mA
VCE = 6V
IC = 5mA
IC = 1mA
IC = 0.1mA
IC = 10mA, IB = 1mA
Q1 and Q2 Matched
VCE = 6V, IC = 1mA
20 32
-
15 24
-
20 60
-
4 5.7 -
- - 0.5
- - 40
35 88
-
40 90
-
35 85
-
0.71 0.81 0.91
0.66 0.76 0.86
0.60 0.70 0.80
- 0.26 0.50
- 0.5 5
- 0.2 3
V
V
V
V
µA
nA
V
V
V
V
mV
µA
Noise Figure
Gain-Bandwidth Product
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
Emitter-to-Base Capacitance
Voltage Gain
Power Gain
Noise Figure
f = 100kHz, RS = 500, IC = 1mA
VCE = 6V, IC = 5mA
VCB = 6V, f = 1MHz
VCI = 6V, f = 1MHz
VBE = 4V, f = 1MHz
VCE = 6V, f = 10MHz, RL = 1k, IC = 1mA
Cascode Configuration
f = 100MHz, V+ = 12V, IC = 1mA
-
-
-
-
-
-
27
-
2.2
1.15
See
Fig. 5
28
30
3.5
-
-
-
-
-
-
-
-
dB
GHz
pF
pF
pF
dB
dB
dB
Input Resistance
Output Resistance
Common-Emitter Configuration
VCE = 6V, IC = 1mA, f = 200 MHz
- 400 -
- 4.6 -
k
Input Capacitance
- 3.7 - pF
Output Capacitance
- 2 - pF
Magnitude of Forward Transadmittance
- 24 - mS
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance
or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
5-2



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