2SK3528-01R

2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-3PF Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO *6 Ratings 600 600 ±17 ±68 ±30 17 412 20 5 3.125 120 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C kVrms < < *3 I F -I D , -di/dt=50A/µs, Vcc BV DSS , Tch < *1 L=2.62mH, Vcc=60V *2 Tch < 150°C = = 150°C = = *4 VDS< = 600V *5 VGS=-30V *6 t=60sec f=60Hz Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge ...