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PD - 9.802A
IRGPC50UD2
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
C
UltraFast CoPack IGBT
VCES = 600V VCE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 27A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m)
Units
V
A
V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
— — — — —
Typ.
— — 0.24 — 6 (0.21)
Max.
0.64 0.83 — 40 —
Units
°C/W
g (oz)
Revision 1
C-725
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IRGPC50UD2
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES
Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 — — V VGE = 0V, I C = 250µA — 0.60 — V/°C VGE = 0V, IC = 1.0mA — 1.9 3.0 IC = 27A V GE = 15V — 2.4 — V IC = 55A See Fig. 2, 5 — 1.9 — IC = 27A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -13 — mV/°C VCE = VGE, IC = 250µA 16 24 — S VCE = 100V, I C = 27A — — 250 µA VGE = 0V, V CE = 600V — — 6500 VGE = 0V, V CE = 600V, T J = 150°C — 1.3 1.7 V IC = 25A See Fig. 13 — 1.2 1.5 IC = 25A, T J = 150°C — — ±100 nA VGE = ±20V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During t b Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 110 17 53 73 71 210 150 1.4 1.6 3.0 73 67 360 230 4.5 13 2900 330 40 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 140 IC = 27A 21 nC VCC = 400V 70 See Fig. 8 — TJ = 25°C — ns IC = 27A, V CC = 480V 320 VGE = 15V, R G = 5.0 Ω 280 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 11, 18 4.5 — TJ = 150°C, See Fig. 9, 10, 11, 18 — ns IC = 27A, V CC = 480V — VGE = 15V, R G = 5.0 Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 I F = 25A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 V R = 200V 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 Pulse width 5.0µs, single shot.
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20 )
VCC=80%(V CES), VGE=20V, L=10µH, R G= 5.0 Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-726
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IRGPC50UD2
40
D u ty c ycle : 5 0 % T J = 1 25 °C T sin k = 9 0 °C G a te d rive a s sp ecified Tu rn -on los se s inc lu de e ffe cts o f rev erse recov ery P ower D issipation = 40W
30
Load Current (A)
20
6 0 % o f ra te d vo lt a g e
10
0 0.1 1 10
A
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I RMS of fundamental)
1000
1000
TJ = 25 °C
100
IC , Collector-to-Emitter Current (A)
I C , Collector-to-E m i.