PD- 94239A
IRGPS60B120KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIOD...
PD- 94239A
IRGPS60B120KD
INSULATED GATE BIPOLAR
TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE
C
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Super-247 Package.
VCES = 1200V VCE(on) typ. = 2.50V
G E
@ VGE = 15V,
N-channel
Benefits
Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation.
ICE = 60A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
1200 105 60 240 240 120 60 240 ± 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A
V W
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Le Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socke...