IRGPS40B120U

PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Super-247 Package. VCES = 1200V VCE(on) typ. = 3.12V G E @ VGE = 15V, N-channel Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Significantly Less Snubber Required Excellent Current Sharing in Parallel Operation. ICE = 40A, Tj=25°C Super-247™ Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 1200 80 40 160 160 ± 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Le Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Recommended Clip Force Weight Internal Emitter Inductance (5mm from package) Min. ––– ––– ––– 20 (2) ––– ––– Typ. ––– 0.24 ––– ––– 6.0 (0.21) 13 Max. 0.20 ––– 40 ––– ––– ––– Units °C/W N(kgf) g (oz) nH www.irf.com 1 1/28/04 IRGPS40B120U Electrical Characteristics @ TJ = 25°C (unless otherwi...