Document
Power Transistors
2SB1156
Silicon PNP epitaxial planar type
For power switching Complementary to 2SD1707
Unit: mm
s Features
q q q q
16.2±0.5 12.5 3.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25˚C)
Ratings –130 –80 –7 –30 –20 100 3 150 –55 to +150 Unit V V V A A W ˚C ˚C
21.0±0.5 15.0±0.2
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw
0.7
15.0±0.3 11.0±0.2
5.0±0.2 3.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A VCE = –2V, IC = –10A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A VCE = –10V, IC = – 0.5A, f = 10MHz IC = –3A, IB1 = – 0.8A, IB2 = 0.8A, VCC = –50V 25 0.5 1.2 0.2 –80 45 90 30 – 0.5 –1.5 –1.5 –2.5 V V V V MHz µs µs µs 260 min typ max –10 –50 Unit µA µA V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*h FE2
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification.
1
Power Transistors
PC — Ta
200 –20 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) IB=–300mA –16 –200mA –12 –140mA –100mA –8 –80mA –60mA –4 (2) (3) 0 0 25 50 75 100 125 150 0 0 –2 –4 –6 –8 –10 –12 –40mA –20mA TC=25˚C
2SB1156
IC — VCE
Collector to emitter saturation voltage VCE(sat) (V)
–10
VCE(sat) — IC
(1) IC/IB=10 (2) IC/IB=20 TC=25˚C
Collector power dissipation PC (W)
Collector current IC (A)
160
–3
120 (1) 80
–1 (2) (1)
– 0.3
– 0.1
40
– 0.03
– 0.01 – 0.1
– 0.3
–1
–3
–10
–30
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
–100 –10 IC/IB=10
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 1000 –30 –10 –3 –1 100˚C 25˚C TC=–25˚C
hFE — IC
VCE=–2V
–3 TC=100˚C 25˚C
Forward current transfer ratio hFE
300
TC=100˚C 25˚C
–1
100 –25˚C 30
– 0.3 –25˚C
– 0.3 – 0.1 – 0.03
– 0.1
10
– 0.03
3
– 0.01 – 0.1
– 0.3
–1
–3
–10
–30
– 0.01 – 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
1 – 0.1
– 0.3
–1
–3
–10
–30
Co.