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B1156 Dataheets PDF



Part Number B1156
Manufacturers Panasonic
Logo Panasonic
Description Silicon PNP epitaxial planar type Transistor
Datasheet B1156 DatasheetB1156 Datasheet (PDF)

Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –130 –80 –7 –30 –20 100 3 150 –55.

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Power Transistors 2SB1156 Silicon PNP epitaxial planar type For power switching Complementary to 2SD1707 Unit: mm s Features q q q q 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –130 –80 –7 –30 –20 100 3 150 –55 to +150 Unit V V V A A W ˚C ˚C 21.0±0.5 15.0±0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw 0.7 15.0±0.3 11.0±0.2 5.0±0.2 3.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf Conditions VCB = –100V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –3A VCE = –2V, IC = –10A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A IC = –8A, IB = – 0.4A IC = –20A, IB = –2A VCE = –10V, IC = – 0.5A, f = 10MHz IC = –3A, IB1 = – 0.8A, IB2 = 0.8A, VCC = –50V 25 0.5 1.2 0.2 –80 45 90 30 – 0.5 –1.5 –1.5 –2.5 V V V V MHz µs µs µs 260 min typ max –10 –50 Unit µA µA V Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 Note: Ordering can be made by the common rank (PQ rank hFE2 = 90 to 260) in the rank classification. 1 Power Transistors PC — Ta 200 –20 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) IB=–300mA –16 –200mA –12 –140mA –100mA –8 –80mA –60mA –4 (2) (3) 0 0 25 50 75 100 125 150 0 0 –2 –4 –6 –8 –10 –12 –40mA –20mA TC=25˚C 2SB1156 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) –10 VCE(sat) — IC (1) IC/IB=10 (2) IC/IB=20 TC=25˚C Collector power dissipation PC (W) Collector current IC (A) 160 –3 120 (1) 80 –1 (2) (1) – 0.3 – 0.1 40 – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) –100 –10 IC/IB=10 VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=10 1000 –30 –10 –3 –1 100˚C 25˚C TC=–25˚C hFE — IC VCE=–2V –3 TC=100˚C 25˚C Forward current transfer ratio hFE 300 TC=100˚C 25˚C –1 100 –25˚C 30 – 0.3 –25˚C – 0.3 – 0.1 – 0.03 – 0.1 10 – 0.03 3 – 0.01 – 0.1 – 0.3 –1 –3 –10 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 1 – 0.1 – 0.3 –1 –3 –10 –30 Co.


STK4362 B1156 A1358


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