PD-91449C
IRG4BC20UD
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Feat...
PD-91449C
IRG4BC20UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
C
UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-220AB package
G
E
N-Channel
VCES = 600V VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A
Benefits
Generation 4 IGBTs offers the highest efficiencies available
Optimized for specific application conditions HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC RθJC RθCS Rθ...