IRG4BC20MD

PD -94115 IRG4BC20MD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Rugged: 10µsec short circuit capable at VGS=15V Low VCE(on) for 4 to 10kHz applications IGBT Co-packaged with ultra-soft-recovery antiparallel diode Industry standard TO-220AB package C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 11A Benefits Offers highest efficiency and short circuit capability for intermediate applications Provides best efficiency for the mid range frequency (4 to 10kHz) Optimized for Appliance Motor Drives, Industrial (Short Circuit Proof) Drives and Intermediate Frequency Range Drives High noise immune "Positive Only" gate driveNegative bias gate drive not necessary For Low EMI designs- requires little or no snubbing Single Package switch for bridge circuit applications Compatible with high voltage Gate Driver IC's Allows simpler gate drive n-cha nn el TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C tsc IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Short Circuit Withstand Time Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, fo...