D1064

Ordering number:722G PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB828/2SD1064 50V/12A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.5V(PNP), 0.4V(NPN) max. · Wide ASO leading to high resistance to breakdown. Package Dimensions unit:mm 2022A [2SB828/2SD1064] ( ) : 2SB828 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A VCE=(–)5V, IC=(–)1A IC=(–)6A, IB=(–)0.3A * : The 2SB828/2SD1064 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 1 ; Base 2 : Collector 3 : Emitter SANYO : TO-3PB Ratings (–)60 (–)50 (–)6 (–)12 (–)17 80 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 70* 30 10 max (–)0.1 (–)0.1 280* 0.4 (–0.5) Unit mA mA MHz V V Any and all SANYO products described or contained herein do not have specifications that...