MPSA55

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA05/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPSA05 MPSA06* PNP MPSA55 MPSA56* Voltage and current are negative for PNP transistors *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA05 MPSA55 60 60 4.0 500 625 5.0 1.5 12 – 55 to +150 MPSA06 MPSA56 80 80 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W CASE 29–04, STYLE 1 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter – Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPSA05, MPSA55 MPSA06, MPSA56 V(BR)CEO MPSA05, MPSA55 MPSA06, MPSA56 V(BR)EBO ICES ICBO — — 0.1 0.1 60 80 4.0 — — — — 0.1 Vdc µAdc µAdc Vdc 1. RqJA is measured with the device soldered into a typic...