MPSA55 Amplifier Transistors Datasheet

MPSA55 Datasheet, PDF, Equivalent


Part Number

MPSA55

Description

Amplifier Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download MPSA55 Datasheet


MPSA55
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA05/D
Amplifier Transistors
COLLECTOR
3
COLLECTOR
3
2
BASE
NPN
1
EMITTER
2
BASE
PNP
1
EMITTER
MAXIMUM RATINGS
Rating
MPSA05 MPSA06
Symbol MPSA55 MPSA56
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
60 80
60 80
4.0
500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA(1) 200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
MPSA05, MPSA55
MPSA06, MPSA56
Emitter – Base Breakdown Voltage
(IE = 100 µAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
MPSA05, MPSA55
MPSA06, MPSA56
v v1. RqJA is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
NPN
MPSA05
MPSA06*
PNP
MPSA55
MPSA56*
Voltage and current are negative
for PNP transistors
*Motorola Preferred Device
1
23
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)EBO
ICES
ICBO
60
80
4.0
Max Unit
Vdc
— Vdc
0.1 µAdc
µAdc
0.1
0.1
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
1

MPSA55
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
100 —
100 —
Collector – Emitter Saturation Voltage
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.25 Vdc
Base–Emitter On Voltage
(IC = 100 mAdc, VCE = 1.0 Vdc)
VBE(on)
1.2 Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(3)
(IC = 10 mA, VCE = 2.0 V, f = 100 MHz)
MPSA05
MPSA06
fT MHz
100 —
(IC = 100 mAdc, VCE = 1.0 Vdc, f = 100 MHz)
MPSA55
MPSA56
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
50 —
5.0 ms
+10 V
0
tr = 3.0 ns
TURN–ON TIME
–1.0 V
VCC
+40 V
100
Vin RB
5.0 mF
100
RL
OUTPUT
t* CS 6.0 pF
TURN–OFF TIME
+VBB
VCC
+40 V
100
5.0 ms
tr = 3.0 ns
Vin RB
5.0 mF
100
RL
OUTPUT
t* CS 6.0 pF
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSA05/D Amplif ier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTO R 3 NPN MPSA05 MPSA06* PNP MPSA55 MPSA 56* Voltage and current are negative fo r PNP transistors *Motorola Preferred D evice MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Colle ctor Current – Continuous Total Devic e Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symb ol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS A05 MPSA55 60 60 4.0 500 625 5.0 1.5 12 – 55 to +150 MPSA06 MPSA56 80 80 Uni t Vdc Vdc Vdc mAdc mW mW/°C Watts mW/ C °C 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junc tion to Ambient Thermal Resistance, Jun ction to Case Symbol RqJA(1) RqJC Max 2 00 83.3 Unit °C/W °C/W CASE 29–04, STYLE 1 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise no.
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