MPSA56

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA56 PNP general purpose transistor Product specification Supersedes data of 1998 Jul 21 1999 Apr 27 Philips Semiconductors Product specification PNP general purpose transistor FEATURES Low current (max. 500 mA) Low voltage (max. 80 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: MPSA06. 1 handbook, halfpage MPSA56 PINNING PIN 1 2 3 collector base emitter DESCRIPTION 2 3 1 2 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open base open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN. MAX. −80 −80 −5 −500 −1 −200 625 +150 150 +150 UNIT V V V mA A mA mW °C °C °C 1999 Apr 27 2 Philips Semiconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat VBE fT PAR...