DatasheetsPDF.com

STB12NM50-1 Dataheets PDF



Part Number STB12NM50-1
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL MOSFET
Datasheet STB12NM50-1 DatasheetSTB12NM50-1 Datasheet (PDF)

STP12NM50 - STP12NM50FP STB12NM50-1 N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/I PAK MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID STP12NM50/FP 500V <0.35Ω 12 A STB12NM50-1 500V <0.35Ω 12 A s TYPICAL RDS(on) = 0.3Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Mul.

  STB12NM50-1   STB12NM50-1



Document
STP12NM50 - STP12NM50FP STB12NM50-1 N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/I PAK MDmesh™ Power MOSFET TYPE VDSS RDS(on) ID STP12NM50/FP 500V <0.35Ω 12 A STB12NM50-1 500V <0.35Ω 12 A s TYPICAL RDS(on) = 0.3Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. TO-220 3 2 1 TO-220FP 123 I PAK (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)12NM50(-1) STP12NM50FP VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 12 12(*) A ID Drain Current (continuos) at TC = 100°C 7.5 7.5(*) A IDM (q) Drain Current (pulsed) 48 48(*) A PTOT Total Dissipation at TC = 25°C 110 35 W Derating Factor 0.88 0.28 W/°C dv/dt(1) Peak Diode Recovery voltage slope 6 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C (•)Pulse width limited by safe operating area April 2000 (1)ISD ≤12A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allowed This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 STP12NM50/FP/STB12NM50-1 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose TO-220 / I PAK TO-220FP 1.13 3.57 62.5 0.5 300 AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 12 400 ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 500 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 10 IGSS Gate-body Leakage Current (VDS = 0) VGS = ±30V ±100 °C/W °C/W °C/W °C Unit A mJ Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250µA VGS = 10V, ID = 6A VDS > ID(on) x RDS(on)max, VGS = 10V Min. 3 12 Typ. 4 0.3 Max. 5 0.35 Unit V Ω A DYNAMIC Symbol Parameter Test Conditions gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 6A Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Input Resistance f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. Min. Typ. 5.2 1000 180 25 1.6 Max. Unit S pF pF pF Ω 2/10 STP12NM50/FP/STB12NM50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time VDD = 250V, ID = 6 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 400V, ID = 12A, VGS = 10V SWITCHING OFF Symbol Parameter tr(Voff) Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Condit ions VDD = 400V, ID = 12 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) SOURCE DRAIN DIODE Symbol Parameter Test Conditions ISD Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 12 A, VGS = 0 trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 12 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Min. Typ. 20 10 28 8 15 Max. Unit ns ns nC nC nC Min . Typ. 19 8 18 Max. Unit ns ns ns Min. Typ. 350 5.25 30 Max. 12 48 1.5 Unit A A V ns µC A Safe Operating Area For TO-220 / I PAK Safe Operating Area For TO-220FP 3/10 STP12NM50/FP/STB12NM50-1 Thermal Impedance For TO-220 / I PAK Thermal Impedance For TO-220FP.


STB12NM50FD STB12NM50-1 STB12NM50


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)