Document
STP12NM50 - STP12NM50FP
STB12NM50-1
N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/I PAK MDmesh™ Power MOSFET
TYPE
VDSS
RDS(on)
ID
STP12NM50/FP
500V
<0.35Ω
12 A
STB12NM50-1
500V
<0.35Ω
12 A
s TYPICAL RDS(on) = 0.3Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED s LOW INPUT CAPACITANCE AND GATE CHARGE s LOW GATE INPUT RESISTANCE s TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
TO-220
3
2 1
TO-220FP
123
I PAK
(Tabless TO-220)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP(B)12NM50(-1) STP12NM50FP
VDS Drain-source Voltage (VGS = 0)
500 V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500 V
VGS Gate- source Voltage
±30 V
ID Drain Current (continuos) at TC = 25°C
12
12(*)
A
ID Drain Current (continuos) at TC = 100°C
7.5
7.5(*)
A
IDM (q) Drain Current (pulsed)
48
48(*)
A
PTOT
Total Dissipation at TC = 25°C
110 35 W
Derating Factor
0.88
0.28 W/°C
dv/dt(1) Peak Diode Recovery voltage slope
6 V/ns
VISO
Insulation Winthstand Voltage (DC)
--
2000
V
Tstg Storage Temperature
–65 to 150
°C
Tj Max. Operating Junction Temperature
150 °C
(•)Pulse width limited by safe operating area
April 2000
(1)ISD ≤12A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (*)Limited only by maximum temperature allowed
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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STP12NM50/FP/STB12NM50-1
THERMAL DATA
Rthj-case Rthj-amb Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220 / I PAK
TO-220FP
1.13 3.57
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value 12 400
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source Breakdown Voltage
ID = 250 µA, VGS = 0
500
IDSS
Zero Gate Voltage Drain Current (VGS = 0)
VDS = Max Rating VDS = Max Rating, TC = 125 °C
1 10
IGSS
Gate-body Leakage Current (VDS = 0)
VGS = ±30V
±100
°C/W °C/W °C/W
°C
Unit A mJ
Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on)
ID(on)
Parameter Gate Threshold Voltage Static Drain-source On Resistance
On State Drain Current
Test Conditions VDS = VGS, ID = 250µA
VGS = 10V, ID = 6A
VDS > ID(on) x RDS(on)max, VGS = 10V
Min. 3
12
Typ. 4
0.3
Max. 5
0.35
Unit V Ω
A
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max, ID = 6A
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg Gate Input Resistance
f=1 MHz Gate DC Bias=0 Test Signal Level=20mV Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ. 5.2 1000 180 25
1.6
Max.
Unit S pF pF pF
Ω
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STP12NM50/FP/STB12NM50-1
ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol
Parameter
Test Conditions
td(on) tr
Turn-on Delay Time Rise Time
VDD = 250V, ID = 6 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3)
Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDD = 400V, ID = 12A, VGS = 10V
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Condit ions
VDD = 400V, ID = 12 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
trr Qrr IRRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Min.
Typ. 20
10
28 8 15
Max.
Unit ns
ns
nC nC nC
Min .
Typ. 19 8 18
Max.
Unit ns ns ns
Min.
Typ.
350 5.25 30
Max. 12 48 1.5
Unit A A V ns µC A
Safe Operating Area For TO-220 / I PAK
Safe Operating Area For TO-220FP
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STP12NM50/FP/STB12NM50-1 Thermal Impedance For TO-220 / I PAK
Thermal Impedance For TO-220FP.