STS11NF30L

® STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS11NF30L s s s s s V DSS 30 V R DS(on) < 0.012 Ω ID 11 A TYPICAL RDS(on) = 0.014 Ω @ 5V TYPICAL Qg = 19 nC @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 11 7 44 2.5 Un it V V V A A A W I DM ( ) P tot () Pulse width limited by safe operating area April 2000 1/6 STS11NF30L THERMAL DATA R thj -amb Tj T s tg (*)Thermal Resistance Junction-ambient Maximum Operating Junction T emperature Stor...