STS10NF30L

® STS10NF30L N - CHANNEL 30V - 0.011Ω - 10A SO-8 STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STS10NF30L s s V DSS 30 V R DS( on) < 0.0135 Ω ID 10 A s TYPICAL RDS(on) = 0.011 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID I DM ( ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 10 6.5 40 2.5 Un it V V V A A A W () Pulse width limited by safe operating area June 2000 1/6 STS10NF30L THERMAL DATA R thj -amb Tj Ts tg (*)Thermal Resistance Junction-ambient Maximum Operating Junction T emperature Storage Temperature 50 150 -55 to 150 o C/W o C o C (*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (B...