®
STS10NF30L
N - CHANNEL 30V - 0.011Ω - 10A SO-8 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STS10NF30L
s s
V DSS 30...
®
STS10NF30L
N - CHANNEL 30V - 0.011Ω - 10A SO-8 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STS10NF30L
s s
V DSS 30 V
R DS( on) < 0.0135 Ω
ID 10 A
s
TYPICAL RDS(on) = 0.011 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR DRIVE s DC-DC CONVERTERS s BATTERY MANAGMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN PORTABLE/DESKTOP PCs
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID I DM ( ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C
o o
Value 30 30 ± 20 10 6.5 40 2.5
Un it V V V A A A W
() Pulse width limited by safe operating area
June 2000
1/6
STS10NF30L
THERMAL DATA
R thj -amb
Tj Ts tg
(*)Thermal Resistance Junction-ambient Maximum Operating Junction T emperature Storage Temperature
50 150 -55 to 150
o
C/W o C o C
(*) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (B...