3V 2M x 8 / 1M x 16 CMOS Flash EEPROM
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• Organization: 2M×8 / 1...
Description
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Organization: 2M×8 / 1M×16 Sector architecture - One 16K; two 8K; one 32K; and thirty-one 64K byte sectors - One 8K; two 4K; one 16K; and thirty-one 32K word sectors - Boot code sector architecture—T (top) or B (bottom) - Erase any combination of sectors or full chip Single 2.7-3.6V power supply for read/write operations Sector protection High speed 70/80/90/120 ns address access time Automated on-chip programming algorithm - Automatically programs/verifies data at specified address Automated on-chip erase algorithm - Automatically preprograms/erases chip or specified sectors Hardware RESET pin - Resets internal state machine to read mode Low power consumption - 200 nA typical automatic sleep mode current - 200 nA typical standby current - 10 mA typical read current JEDEC standard software, packages and pinouts - 48-pin TSOP - 44-pin SO (availability TBD) CFI (Common Flash Interface) compliant Detection of program/erase cycle completion - DQ7 DATA polling - DQ6 toggle bit - RY/BY output Erase suspend/resume - Supports reading data from or programming data to a sector not being erased Low VCC write lock-out below 1.5V 10 year data retention at 150C 100,000 write/erase cycle endurance
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RY/BY VCC VSS RESET Program/erase control Command register CE OE Program voltage generator Chip enable Output enable Logic STB Data latch Sector prot...
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