STK830FC

Semiconductor STK830FC Advanced Power MOSFET Features Avalanche rugged technology. Low input capacitance. Improved gate charge. Low leakage current : 10uA (Max.) @ VDS=500V. Low RDS(ON) : 1.17Ω(Typ.) Ordering Information Type NO. STK830FC Marking STK830 Package Code TO-220F-3SL Outline Dimensions unit : mm PIN Connections 1. Gate 2. Drain 3. Source KST-H017-000 1 STK830FC Absolute maximum ratings Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current (Tc=25℃) Continuous Drain current (Tc=100℃) Drain Current-Pulsed Power Dissipation (Tc=25℃) Linear Derating Factor Single Pulsed Avalanche Energy Avalanche current Repetitive Avalanche Energy ① Symbol VDSS VGS ID ID IDM PD ② ① ① EAS IAR EAR dv/dt TJ , Tstg TL Rating 500 ±30 4.5 2.9 * * Unit V V A A A W W/℃ mJ A mJ V/ns °C °C 18 38 0.3 270 4.5 7.3 5.5 -55~150 300 Peak Diode Recovery dv/dt Operating Junction and Storage temperature range Maximum lead temp. for soldering Purpose, 1/8” from case for 5-seconds * Limited by Maximum junction Temperature Thermal Resistance Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Symbol Rθ JC Rθ CS Rθ JA Typ. 0.5 Max 3.31 Units ℃/W 62.5 KST-H017-000 2 STK830FC Electrical Characteristics (Tc=25°C unless otherwise specified) Characteristic Drain-Source breakdown voltage Gate-Threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transconductance Input capacitance Output capacit...