STD1NC40-1

® STD1NC40-1 N - CHANNEL 400V - 8Ω - 1A - IPAK PowerMESH™ ΙΙ MOSFET PRELIMINARY DATA TYPE STD1NC40-1 s s s s s V DSS 400 V R DS(on) < 10 Ω ID 1A TYPICAL RDS(on) = 8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 IPAK TO-251 (Suffix "-1") DESCRIPTION Using the latest high voltage MESH OVERLAY™ ΙΙ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS SWITCH MODE LOW POWER SUPPLIES (SMPS) s CFL s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature o o Value 400 400 ± 30 1 0.63 4 25 0.2 3 -65 to 150 150 ( 1) ISD ≤1A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ o C V/ns o o C C 1/5 () Pulse width limited by safe operating area STD1NC40-1 THERMAL DATA R thj-case Rthj-amb R thc...