Semiconductor
STD1766
NPN Silicon Transistor
Descriptions
• Medium power amplifier
Features
• PC(Collector dissipatio...
Semiconductor
STD1766
NPN Silicon
Transistor
Descriptions
Medium power amplifier
Features
PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used) Low collector saturation voltage : VCE(sat)=0.5V(Typ.) Complementary pair with STB1188
Ordering Information
Type NO. STD1766 Marking B2 : hFE rank, monthly code Package Code SOT-89
Outline Dimensions
4.0 0.50±0.1 2.5
-0.3 +0.5 -0.3 +0.2
unit : mm
1.00±0.3
3
1.82±0.05
-0.1 +0.2
2
0.52±0.05 0.15 Typ.
4.5
1
0.42±0.05 1.5
-0.1 +0.2
0~0.1
-0.02 +0.04
PIN Connections 1. Base 2. Collector 3. Emitter
KST-8006-001
0.42
1
STD1766
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC PC
*
Ratings
40 32 5 2 0.5 2 150 -55~150
Unit
V V V A W °C °C
Tj Tstg
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob
Test Condition
IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 VCE=3V, IC=0.5A IC=2A, IB=200mA VCB=5V, IC=500mA VCB=10V, IE=0, f=1MHz
Min. Typ. Max.
40 ...