STD1HNC60

N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK PowerMesh™II MOSFET TYPE STD1HNC60 s s s s s STD1HNC60 VDSS 600 V RDS(on) <5Ω ID 2A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251 3 2 1 1 3 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 600 600 ±30 2 1.3 8 50 0.4 3.5 –65 to 150 150 (1)ISD ≤ 2A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX Unit V V V A A A W W/°C V/ns °C °C PTOT dv/dt Tstg Tj . ()Pulse width limited by safe operating area February 2001 1/9 STD1HNC60 THERMAL DATA Rthj-case Rthj-amb Rthj-sink Tl Thermal Resistance Junction-case Max Thermal ...