STD19NE06

N-CHANNEL 60V - 0.042 Ω - 19A IPAK/DPAK STripFET™ POWER MOSFET TYPE STD19NE06 s s s s s STD19NE06 VDSS 60 V RDS(on) <0.050 Ω ID 19 A s TYPICAL RDS(on) = 0.042 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175 oC OPERATING TEMPERATURE THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX “-1") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX “T4") 3 2 1 IPAK TO-251 (Suffix “-1”) DPAK TO-252 (Suffix “T4”) 3 1 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 60 60 ± 20 19 13.5 76 70 0.46 1.45 -55 to 175 (1) Starting T j = 25 oC, ID = 30A, VDD = 30 V Unit V V V A A A W W/°C mJ °C () Pulse width limited by safe operating area March 2002 . ...