Semiconductor
STD13007FC
NPN Silicon Power Transistor
Features
• High speed switching • High Collector Voltage : VCBO ...
Semiconductor
STD13007FC
NPN Silicon Power
Transistor
Features
High speed switching High Collector Voltage : VCBO = 700V Suitable for Switching
Regulator and Motor Control
Ordering Information
Type NO. STD13007FC Marking STD13007 Package Code TO-220F-3SL
Outline Dimensions
unit :
mm
PIN Connections 1. Base 2. Collector 3. Emitter
KST-H028-000
1
STD13007FC
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Collector Power dissipation (Tc=25℃) Junction temperature Storage temperature (Tc=25℃)
Symbol
VCBO VCEO VEBO IC ICM IB PC Tj Tstg
Rating
700 400 9 8 16 4 40 150 -55~150
Unit
V V V A A A W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter sustaining voltage Emitter cut-off current DC Current gain
(Tc=25℃)
Symbol
BVCEO(sus) IEBO hFE*
Test Condition
IC=10mA, IB=0 VEB=9V, IC=0 IC=2A, VCE=5V IC=5A, VCE=5V IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A
Min. Typ. Max.
400 8 5 14 80 1 60 30 1 2 3 1.2 1.6 1.6 3 0.7
Unit
V mA
Collector-Emitter saturation voltage
VCE(sat)*
V
Base-Emitter saturation voltage Transition frequency Output capacitance Turn on Time Storage Time Fall Time * Pulse test: PW≤300 ㎲, Duty cycle≤2%.
VBE(sat)* fT Cob ton tstg tf
IC=2A, IB=0.4A IC=5A, IB=1A VCE=10V, IC=0.5A, f=1MHz VCB=10V, IE=0, f=0.1MHz VCC=125V, IC=5A IB1=-IB2=1A
V MHz pF
-
㎲
KST-H028-000
2
STD13007FC
Electrical Characteristic C...
