Semiconductor
STD13005F
NPN Silicon Power Transistor
Features
• High speed switching • VCEO(sus)=400V • Suitable for S...
Semiconductor
STD13005F
NPN Silicon Power
Transistor
Features
High speed switching VCEO(sus)=400V Suitable for Switching
Regulator and Motor Control
Ordering Information
Type NO. STD13005F Marking STD13005 Package Code TO-220F
Outline Dimensions
unit :
mm
PIN Connections 1. Base 2. Collector 3. Emitter
KST-H019-000
1
STD13005F
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total Power dissipation (Tc=25℃) Junction temperature Storage temperature (Tc=25℃)
Symbol
VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg
Ratings
700 400 9 4 8 2 4 30 150 -55~150
Unit
V V V A A A A W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter sustaining voltage Collector cut-off current Emitter cut-off current DC Current gain
(Tc=25℃)
Symbol
VCE(sus) ICEV IEBO hFE*
Test Condition
IC=10mA, IB=0 VCEV=Rated Value VBE(off)=1.5V VEB=9V, IC=0 IC=1A, VCE=5V IC=2A, VCE=5V IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A
Min. Typ. Max.
400 10 8 4 65 1 1 60 40 0.5 0.6 1 1.2 1.6 0.8 4 0.9
Unit
V mA mA
Collector-Emitter saturation voltage
VCE(sat)*
V
Base-Emitter saturation voltage Transition frequency Output capacitance Turn on Time Storage Time Fall Time
VBE(sat)* fT Cob tON tSTG tF
IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, IC=0.5A, f=1MHz VCB=10V, IE=0, f=0.1MHz VCC=125V,IC=2A, RL=62.5Ω IB1=-IB2=0.4A
V MHz pF
-
㎲
* Pulse test: ...