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STD13003

ST Microelectronics

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

® STD13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s REVERSE PINS OUT Vs STANDARD IPAK (TO-25...


ST Microelectronics

STD13003

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Description
® STD13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s s REVERSE PINS OUT Vs STANDARD IPAK (TO-251) / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4") THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix "-1") 3 2 1 1 3 APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES s IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage o (I C = 0, I B = 0.75 A, tp < 10 µ s, T j < 150 C) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 700 400 BV EBO 1.5 3 0.75 1.5 20 -65 to 150 150 Unit V V V A A A A W o C o C September...




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