STD123U

Semiconductor STD123U NPN Silicon Transistor Features Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6Ω(Max.) (IB=1mA) Ordering Information Type NO. STD123U Marking 123 Package Code SOT-323 Outline Dimensions unit : mm 2.1±0.1 1.25±0.05 1 1.30±0.1 2.0±0.2 3 2 2 0.30±0.1 0.15±0.05 0.90±0.1 0.1 Min. 0~0.1 PIN Connections 1. Base 2. Emitter 3. Collector KST-3065-000 1 STD123U Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 15 6.5 1 200 150 -55~150 Unit V V V A mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance On resistance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob RON Test Condition IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA VCB=10V, IE=0, f=1MHz f=1KHz, IB=1mA, VIN=0.3V Min. Typ. Max. 20 15 6.5 150 0.1 260 5 0.6 0.1 0.1 0.3 - Unit V V V µA µA ...