PF08109B

PF08109B MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone ADE-208-821B (Z) 3rd Edition Mar. 2000 Application Dual band Amplifier for E-GSM (880 to 915 MHz) and DCS1800 (1710 to 1785 MHz) For 3.5 V nominal battery use Features 2 in / 2 out dual band amplifire Simple external circuit including output matching circuit High gain 3stage amplifier : 0 dBm input Typ Lead less thin & Small package : 11 × 13.75 × 1.8 mm Typ High efficiency : 50% Typ at nominal output power for E-GSM 43% Typ at 32.7 dBm for DCS1800 Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current Symbol Vdd Idd GSM Idd DCS Vtxlo voltage Vapc voltage Input power Operating case temperature Storage temperature Output power Vtxlo Vapc Pin Tc (op) Tstg Pout GSM Pout DCS Rating 8 3 2 4 4 10 –30 to +100 –30 to +100 5 3 Unit V A A V V dBm °C °C W W Note: The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz), and the DCS1800-band (1710 to 1785 MHz). PF08109B Electrical Characteristics for DC (Tc = 25°C) Item Drain cutoff current Vapc control current Vtxlo control current Symbol Ids Iapc Itxlo Min — — — Typ — — — Max 100 3 100 Unit µA mA µA Test Condition Vdd = 8 V, Vapc = 0 V Vapc =2.2 V Vtxlo = 2.4 V Electrical Characteristics for E-GSM mode (Tc = 25°C) Test conditions unless otherwise noted: f = 880 to 915 MHz, Vdd GSM = 3.5 V, Pin GSM = 0 dBm, Rg = Rl = 50 Ω, Tc = 25°C, Vapc DCS = 0.1 V Pulse operation with pulse width 577 µs and duty...