MOSFET. SSP7N60B Datasheet

SSP7N60B Datasheet PDF


Part

SSP7N60B

Description

600V N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Page 11 Pages
Datasheet
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SSP7N60B Datasheet
SSP7N60B/SSS7N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 7.0A, 600V, RDS(on) = 1.2@VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 23 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• TO-220F package isolation = 4.0kV (Note 6)
D
G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
SSP7N60B SSS7N60B
600
7.0 7.0 *
4.4 4.4 *
28 28 *
± 30
420
7.0
14.7
5.5
147 48
1.18 0.38
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
SSP7N60B
0.85
0.5
62.5
SSS7N60B
2.6
--
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002

SSP7N60B Datasheet
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 --
ID = 250 µA, Referenced to 25°C -- 0.65
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A (Note 4)
2.0
--
--
--
1.0
8.2
4.0
1.2
--
V
S
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1380 1800
-- 115 150
-- 23
30
pF
pF
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 7.0 A,
RG = 25
-- 30
70
-- 80 170
-- 125 260
(Note 4, 5)
--
85
180
VDS = 480 V, ID = 7.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
38
6.4
15
50
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 7.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 28
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.0 A
-- -- 1.4
trr Reverse Recovery Time
VGS = 0 V, IS = 7.0 A,
-- 415
--
Qrr Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
4.6
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 15.7mH, IAS = 7.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 7.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
6. Only for back side in Viso = 4.0kV and t = 0.3s
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
Rev. B, June 2002


Features Datasheet pdf SSP7N60B/SSS7N60B SSP7N60B/SSS7N60B 600 V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced u sing Fairchild’s proprietary, planar, DMOS technology. This advanced technol ogy has been especially tailored to min imize on-state resistance, provide supe rior switching performance, and withsta nd high energy pulse in the avalanche a nd commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 p F) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F pack age isolation = 4.0kV (Note 6) D G G DS TO-220 SSP Series GD S TO-220F SS S Series S Absolute Maximum Ratings S ymbol VDSS ID IDM VGSS EAS IAR EAR dv/d t PD TJ, TSTG TL TC = 25°C unless oth erwise noted Parameter Drain-Source Vo ltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curre.
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