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IRIS-A6131 Dataheets PDF



Part Number IRIS-A6131
Manufacturers International Rectifier
Logo International Rectifier
Description INTEGRATED SWITCHER
Datasheet IRIS-A6131 DatasheetIRIS-A6131 Datasheet (PDF)

IRIS-A6131 •Small sized 8-pin DIP type full molded package, optimum IC for lowheight SMPS •Off-timer circuit is provided on the monolithic control IC • Low start-up circuit current (10uA max) Package Outline •Low circuit current at operation (1.5mA typ) • Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. •Built-in Start-up circuit (the power loss in t.

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IRIS-A6131 •Small sized 8-pin DIP type full molded package, optimum IC for lowheight SMPS •Off-timer circuit is provided on the monolithic control IC • Low start-up circuit current (10uA max) Package Outline •Low circuit current at operation (1.5mA typ) • Avalanche energy guaranteed MOSFET with high VDSS The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. No VDSS de-rating is required. •Built-in Start-up circuit (the power loss in the start-up circuit is reduced by cutting off the start-up circuit after the IC starts its operation.) •Auto Burst Stand-by (realizing input power<0.1W at no load) •Auto Bias Function (stable burst operation without the interference on transformer) •Two operational modes by auto switching functions For normal operation: PRC mode For stand-by operation (at light load): Burst mode •Built-in Leading Edge Blanking Function 8 Lead PDIP • Built-in constant voltage drive circuit Various kinds of protection functions Pulse-by-pulse Overcurrent Protection (OCP) Key Specifications Overvoltage Protection with latch mode (OVP) MOSFET RDS(ON) Thermal Shutdown with latch mode (TSD) Features INTEGRATED SWITCHER Type VDSS(V) 500 MAX ACinput(V) Pout(W) Note 1 10 Descriptions IRIS-A6131 3.95Ω 100/120±15% IRIS-A6131 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design. Note: PRC is abbreviation for “Pulse Ratio Control” (On-width control with fixed OFF-time). Typical Connection Diagram 8 D D 7 6 NC 5 Startup IRIS-A6131 OCP 1 Vcc 2 GND 3 FB 4 Note 1: The pout (W) represents the thermal rating at PRC Operation. The peak power output is obtained by approximating 120 to 140% of the above listed value. When the output voltage is low and ON-duty is narrow, the Pout (W) shall become lower than that of above value. www.irf.com 1 IRIS-A6131 Absolute Maximum Ratings (Ta=25℃) Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol IDpeak IDMAX Definition Drain Current *1 Maximum switching current Terminals Max. Ratings 8-3 3.2 8-3 3.2 Units A A EAS VOCP VCC VFB/OLP Vstartup P D1 P D2 TF Top Tstg Tch Single pulse avalanche energy *2 O.C.P. pin Voltage Input voltage for control part F.B/O.L.P pin voltage Startup pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature 8-3 1-3 2-3 4-3 5-3 8-3 2-3 - 32 -0.5~6 35 -0.5~10 -0.3~600 1.35 0.14 -20 ~ +125 -20 ~ +125 -40 ~ +125 150 mJ V V Note Single Pulse V1-3=0.86V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=2.1A W W ℃ ℃ ℃ ℃ *5 Specified by Vcc×ICC Refer to recommended operating temperature *1 Refer to MOSFET A.S.O curve *2 MOSFET Tch-EAS curve *3 Refer to MOSFET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC *5 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm) Fig.1 V1-2 www.irf.com 2 IRIS-A6131 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) Symbol Definition VCC(ON) Operation start voltage VCC(OFF) Operation stop voltage ICC(ON) ICC(OFF) VCC(bias) TOFF(MAX) VOCP Tbw Vburst VOLP IOLP IFB(MAX) Circuit current in operation Circuit current in non-operation Auto bias threshold voltage Vcc(bias) - Vcc(OFF) Maximum OFF time O.C.P. threshold voltage Leading edge blanking time Burst threshold voltage O.L.P. threshold voltage Out-flow current at O.L.P operation Maximum F.B. current MIN 16 9 9.6 0.2 7.3 0.69 200 0.7 6.5 18 227 340 28.7 6.6 135 Ratings TYP 17.5 10 10.6 8 0.77 320 0.79 7.2 26 300 790 31.2 7.3 - MAX 19.2 11 4 50 11.6 8.7 0.86 480 0.88 7.9 35 388 1230 30 34.1 200 8 - Units V V mA µA V V µsec V nsec V V µA µA µA µA V µA V ℃ Test Conditions VCC=0→19.2V VCC=19.2→9.V VCC=14V VCC=20→9.6V VCC=15V IST ART UP Startup current IST ART (leak) Startup circuit leakage current VCC(OVP ) ICC(H) O.V.P operation voltage Latch circuit sustaining current *6 Latch circuit release voltage *6 VCC=0→34.1V VCC=34.1→8.5V VCC=34.1→6.6 V VCC(La.OFF) Tj(TSD) Thermal shutdown operating temperature - *6 The latch circuit means a circuit operated O.V.P and T.S.D. Electrical Characteristics (for MOSFET) (Ta=25℃) unless otherwise specified Symbol VDSS Definition Drain-to-Source breakdown voltage MIN 500 *7 - Ratings TYP - MAX 300 3.95 250 52.


IRIS-F6426S IRIS-A6131 FE0203


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