SPD23N05 SPU23N05
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C op...
SPD23N05 SPU23N05
SIPMOS ® Power
Transistor
N channel Enhancement mode Avalanche-rated dv /dt rated 175°C operating temperature
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V 55 V
ID 22 A 22 A
RDS(on) 0.06 Ω 0.06 Ω
Package
Ordering Code
SPD23N05 SPU23N05
P-TO252 P-TO251
Q67040 - S4138 - A2 Q67040 - S4131 - A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 25 °C TC = 100 °C
ID
A 22 16
Pulsed drain current
TC = 25 °C
IDpuls
88
EAS
Avalanche energy, single pulse
ID = 22 A, V DD = 25 V, RGS = 25 Ω L = 372 µH, Tj = 25 °C
mJ
90
IAR EAR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 22 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C
22 5.5
A mJ kV/µs
dv /dt
6
VGS Ptot
Gate source voltage Power dissipation
TC = 25 °C
± 20
55
V W
Semiconductor Group
1
29/Jan/1998
SPD23N05 SPU23N05
Maximum Ratings Parameter Symbol Values Unit
Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 2.7 ≤ 50 ≤ 100
55 / 175 / 56
K/W
** when mounted on 1 " square PCB ( FR4 );for recommended footprint
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = ...