SPU28N03

SPD 28N03 SIPMOS® Power Transistor Features N channel Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 28 V A Enhancement mode RDS(on) 0.023 Ω Avalanche rated dv/dt rated 175˚C operating temperature Type SPD28N03 SPU28N03 Package P-TO252 Ordering Code Q67040-S4138 Packaging Tape and Reel Pin 1 G Pin 2 Pin 3 D S P-TO251-3-1 Q67040-S4140-A2 Tube Maximum Ratings, at Tj = 25 ˚C, unless otherwise specified Parameter Continuous drain current Symbol Value 28 28 112 145 7.5 6 kV/µs mJ Unit A ID TC = 25 ˚C, 1) TC = 100 ˚C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 ˚C Avalanche energy, single pulse ID = 28 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 28 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 ˚C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±20 75 -55... +175 55/175/56 V W ˚C TC = 25 ˚C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 06.99 SPD 28N03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 2 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics , at Tj = 25 ˚C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. 3 max. ...