STP80NF75L STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET
TYPE STP80...
STP80NF75L STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET
TYPE STP80NF75L STB80NF75L STB80NF75L-1
s s s s
VDSS 75 V 75 V 75 V
RDS(on) <0.01 Ω <0.01 Ω <0.01 Ω
ID 80 A 80 A 80 A
3 1
3 12
TYPICAL RDS(on) = 0.008 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
D2PAK TO-263
I2PAK TO-262
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s SOLENOID AND RELAY DRIVERS
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID() ID IDM() Ptot dv/dt
(1)
Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature
Value 75 75 ± 16 80 80 320 300 2 12 930 -55 to 175
Unit V V V A A A W W/°C V/ns mJ °C
EAS (2) Tstg Tj
()Current Limited by Package () Pulse width limited by safe opera...