N-Channel MOSFET
STD5NM60 STB8NM60 - STP8NM60
N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK
...
Description
STD5NM60 STB8NM60 - STP8NM60
N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK
Features
Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP
VDSS 650 V 650 V 650 V 650 V 650 V
RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω
ID 5A 5A 5A 8A 8 A(1)
Pw 96 W 96 W 100 W 100 W 30 W
■ 100% avalanche tested ■ HIgh dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
■ Switching applications
Description
The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
3 1
DPAK
3 1
D²PAK
3 2 1
TO-220
3 2
TO-220F1P
3 2 1
IPAK
Figure 1. Internal schematic diagram
Table 1. Device summary Order codes
STD5NM60-1 STD5NM60T4 STB8NM60T4
STP8NM60 STP8NM60FP
Marking D5NM60 D5NM60 B8NM60 P8NM60 P8NM60FP
Package IPAK DPAK D²PAK
TO-220 TO-220FP
Packaging Tube
Tape & reel Tape & reel
Tube Tube
October 2008
Rev 17
1/18
www.st.com
18
Electrical ratings
1
Electrical ratings
STP8NM60, STD5NM60, STB8NM60
2/18
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
ID
Drain current (continuous) at TC ...
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