STP85NF55L

N-CHANNEL 55V - 0.0060 Ω - 80A D2PAK/TO-220 STripFET™ II POWER MOSFET TYPE STP85NF55L STB85NF55L s s s STB85NF55L STP85NF55L VDSS 55 V 55 V RDS(on) <0.008 Ω <0.008 Ω ID 80 A 80 A TYPICAL RDS(on) = 0.0060 Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE 3 1 3 1 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT Ordering Information SALES TYPE STP85NF55L STB85NF55L STB85NF55LT4 MARKING P85NF55L B85NF55L B85NF55L D2PAK TO-263 (Suffix “T4”) TO-220 ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM PACKAGE TO-220 D2PAK D2PAK PACKAGING TUBE TUBE TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID() ID IDM () Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 15 80 80 320 300 2.0 10 980 -55 to 175 ...