STP80NF55L-08 STB80NF55L-08
N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET
PRELIMINARY DATA TYPE...
STP80NF55L-08 STB80NF55L-08
N-CHANNEL 55V - 0.0065Ω - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET
PRELIMINARY DATA TYPE STP80NF55L-08 STB80NF55L-08
s s s
VDSS 55 V 55 V
RDS(on) 0.008Ω 0.008Ω
ID 80 A 80 A
TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE LOGIC LEVEL DEVICE
1
3
3 2
1
TO-220 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
D2PAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID (1) ID (1) IDM ( ) PTOT dv/dt (2) EAS(3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 16 80 80 320 300 2 15 870 –55 to 175 175
(1) Current Limited by Package (2) ISD ≤80A, di/dt ≤ 500A/µs, VDD =40V Tj ≤ TJMAX. (3) Starting Tj=25°C, ID=40A, VDD=40V
Unit V V V A A A W W/°C V/ns mJ °C °C
(q ) Pulse width limited by safe operat...
