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STP80PF55 Dataheets PDF



Part Number STP80PF55
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description P-CHANNEL POWER MOSFET
Datasheet STP80PF55 DatasheetSTP80PF55 Datasheet (PDF)

STB80PF55 STP80PF55 P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type STP80PF55 STB80PF55 VDSS 55V 55V RDS(on) <0.018Ω <0.018Ω ■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 80A 80A Application ■ Switching applications Description These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing dens.

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STB80PF55 STP80PF55 P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type STP80PF55 STB80PF55 VDSS 55V 55V RDS(on) <0.018Ω <0.018Ω ■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization ID 80A 80A Application ■ Switching applications Description These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility. 3 1 D2PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code STP80PF55 STB80PF55 Marking P80PF55 B80PF55 Package TO-220 D2PAK Packaging Tube Tape and reel August 2010 Doc ID 8177 Rev 6 1/16 www.st.com 16 Contents Contents STB80PF55, STP80PF55 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 Doc ID 8177 Rev 6 STB80PF55, STP80PF55 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25°C ID IDM (2) Drain current (continuous) at TC = 100°C Drain current (pulsed) PTOT Total dissipation at TC = 25°C Derating factor dv/dt (3) Peak diode recovery voltage slope EAS(4) Single pulse avalanche energy Tj Operating junction temperature Tstg Storage temperature 1. Current limited by package. 2. Pulse width limited by safe operating area . 3. ISD < 40A, di/dt < 300 A/µs, VDD=80% V(BR)DSS. 4. Starting Tj=25°C, ID=80A, VDD=40V. Value 55 ±16 80 57 320 300 2 7 1.4 -55 to 175 Unit V V A A A W W/°C V/ns J °C Note: Table 3. Thermal data Symbol Parameter Rthj-case Rthj-a Tl Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 0.5 62.5 300 Unit °C/W °C/W °C For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Doc ID 8177 Rev 6 3/16 Electrical characteristics 2 Electrical characteristics STB80PF55, STP80PF55 (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Drain-source V(BR)DSS breakdown voltage IDSS IGSS VGS(th) RDS(on) Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. Unit ID = 250 mA, VGS = 0 55 V VDS = Max rating VDS = Max rating, TC=125 °C 1 µA 10 µA VGS = ±16 V ±10 µA VDS = VGS, ID = 250 µA 2 3 4V VGS = 10 V, ID = 40 A 0.016 0.018 Ω Table 5. Dynamic Symbol Parameter Test conditions gfs Ciss Coss Crss Qg Qgs Qgd Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge VDS > ID(on) x RDS(on)max, ID= 40 A VDS = 25 V, f = 1MHz, VGS = 0 ID = 25 A, VDD = 80 V, VGS = 10 V (see Figure 15) Min. Typ. Max. Unit - 32 S 5500 - 1130 600 pF pF pF 190 258 nC - 27 nC 65 nC Table 6. Symbol Switching times Parameter td(on) tr Turn-on delay time Rise time td(off) tf Turn-off delay time Fall time tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time Test conditions VDD=25 V, ID=40 A, RG=4.7 Ω, VGS=10 V (see Figure 14) VDD=25 V, ID=40 A, RG=4.7 Ω, VGS=10 V (see Figure 14) Vclamp=40 V, ID=80 A, RG=4.7 Ω, VGS=10 V (see Figure 14) Min. Typ. Max. Unit 35 -- 190 ns ns 165 -- 80 60 - 40 - 85 ns ns ns ns ns 4/16 Doc ID 8177 Rev 6 STB80PF55, STP80PF55 Electrical characteristics Note: Table 7. Source drain diode Symbol Parameter Test condictions Min. Typ. Max. Unit ISD ISDM (1) VSD (2) Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 80 A, VGS = 0 trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs VDD = 25 V, Tj =150 °C 1. Pulse width limited by Tjmax . 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. - 10 A 40 A 1.6 V 110 ns 495 µC 9A For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Doc ID 8177 Rev 6 5/16 Electrical characteristics 2.1 Electrical characteristics (curves) ST.


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