Document
STB80PF55 STP80PF55
P-channel 55 V, 0.016 Ω, 80 A TO-220, D2PAK STripFETTM II Power MOSFET
Features
Type STP80PF55 STB80PF55
VDSS 55V 55V
RDS(on) <0.018Ω <0.018Ω
■ Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
ID 80A 80A
Application
■ Switching applications
Description
These Power MOSFETs are the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps allowing remarkable manufacturing reproducibility.
3 1
D2PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary Order code STP80PF55 STB80PF55
Marking P80PF55 B80PF55
Package TO-220 D2PAK
Packaging Tube
Tape and reel
August 2010
Doc ID 8177 Rev 6
1/16
www.st.com
16
Contents
Contents
STB80PF55, STP80PF55
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 8177 Rev 6
STB80PF55, STP80PF55
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25°C
ID IDM (2)
Drain current (continuous) at TC = 100°C Drain current (pulsed)
PTOT
Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS(4)
Single pulse avalanche energy
Tj Operating junction temperature Tstg Storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area .
3. ISD < 40A, di/dt < 300 A/µs, VDD=80% V(BR)DSS. 4. Starting Tj=25°C, ID=80A, VDD=40V.
Value 55 ±16 80 57 320 300 2 7 1.4
-55 to 175
Unit V V A A A W
W/°C V/ns
J
°C
Note:
Table 3. Thermal data
Symbol
Parameter
Rthj-case Rthj-a Tl
Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose
Value 0.5 62.5 300
Unit °C/W °C/W
°C
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Doc ID 8177 Rev 6
3/16
Electrical characteristics
2 Electrical characteristics
STB80PF55, STP80PF55
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source V(BR)DSS breakdown voltage
IDSS
IGSS VGS(th) RDS(on)
Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage
Static drain-source on resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 mA, VGS = 0
55
V
VDS = Max rating VDS = Max rating, TC=125 °C
1 µA 10 µA
VGS = ±16 V
±10 µA
VDS = VGS, ID = 250 µA
2 3 4V
VGS = 10 V, ID = 40 A
0.016 0.018 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs
Ciss Coss Crss
Qg Qgs Qgd
Forward transconductance
Input capacitance Output capacitance Reverse transfer capacitance
Total gate charge Gate-source charge Gate-drain charge
VDS > ID(on) x RDS(on)max, ID= 40 A
VDS = 25 V, f = 1MHz, VGS = 0
ID = 25 A, VDD = 80 V, VGS = 10 V (see Figure 15)
Min. Typ. Max. Unit
- 32
S
5500 - 1130
600
pF pF pF
190 258 nC
- 27
nC
65 nC
Table 6. Symbol
Switching times Parameter
td(on) tr
Turn-on delay time Rise time
td(off) tf
Turn-off delay time Fall time
tr(Voff) tf tc
Off-voltage rise time Fall time Cross-over time
Test conditions
VDD=25 V, ID=40 A, RG=4.7 Ω, VGS=10 V (see Figure 14)
VDD=25 V, ID=40 A, RG=4.7 Ω, VGS=10 V (see Figure 14)
Vclamp=40 V, ID=80 A, RG=4.7 Ω, VGS=10 V (see Figure 14)
Min. Typ. Max. Unit
35 --
190
ns ns
165 --
80
60 - 40 -
85
ns ns
ns ns ns
4/16 Doc ID 8177 Rev 6
STB80PF55, STP80PF55
Electrical characteristics
Note:
Table 7. Source drain diode
Symbol
Parameter
Test condictions
Min. Typ. Max. Unit
ISD ISDM (1)
VSD (2)
Source-drain current Source-drain current (pulsed)
Forward on voltage
ISD = 80 A, VGS = 0
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 80 A, di/dt = 100 A/µs VDD = 25 V, Tj =150 °C
1. Pulse width limited by Tjmax .
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %.
-
10 A 40 A
1.6 V
110 ns 495 µC
9A
For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
Doc ID 8177 Rev 6
5/16
Electrical characteristics
2.1 Electrical characteristics (curves)
ST.