MPS6514

MPS6514 MPS6514 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value 25 40 4.0 200 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition IC = 0.5mA, IB = 0 IC =10µA, IE = 0 IC = 10µA, IC = 0 VCE = 30V, IE = 0 VCB = 30V, IE = 0, T = 100°C IC = 2.0mA, VCE = 10V IC = 100mA, VCE = 10V IC = 50mA, IB = 5.0mA VCB = 10V, IE = 0, f = 100kHz 150 90 Min. 25 40 4.0 50 1.0 300 0.5 3.5 V pF Max. Units V V V nA µA Off Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICBO hFE VCE(sat) Cobo Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Output C...