MPS651

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS650/D Amplifier Transistors COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3 NPN MPS650 MPS651 * PNP MPS750 MPS751 * Voltage and current are negative for PNP transistors *Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS650 MPS750 40 60 5.0 2.0 625 5.0 1.5 12 – 55 to +150 MPS651 MPS751 60 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C 1 2 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0 ) Emitter – Base Breakdown Voltage (IC = 0, IE = 10 µAdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%. MPS650, MPS750 MPS651, MPS751 IEBO V(BR)CEO MPS650, MPS750 MPS651, MPS751 V(BR)CBO MPS650, MPS7...