MPS6530

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS6530/D Amplifier Transistor NPN Silicon COLLECTOR 3 2 BASE MPS6530 1 1 EMITTER 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Junction Temperature Symbol VCEO VCBO VEBO IC PD TJ, Tstg Value 40 60 5.0 600 625 150 Unit Vdc Vdc Vdc mAdc mW °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 0.2 Unit °C/mW ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IB = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0, TA = 60°C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — 0.05 2.0 40 60 5.0 — — — Vdc Vdc Vdc mAdc REV 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS6530 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base – Emitter Saturation Volta...