MPS6714

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS6714/D One Watt Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS6714 MPS6715 MAXIMUM RATINGS Rating Collector – Emitter Voltage MPS6714 MPS6715 Collector – Base Voltage MPS6714 MPS6715 Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 50 5.0 1.0 1.0 8.0 2.5 20 – 55 to +150 Vdc Adc Watts mW/°C Watts mW/°C °C Symbol VCEO 30 40 Vdc Value Unit Vdc 1 2 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS6714 MPS6715 IEBO V(BR)CEO MPS6714 MPS6715 V(BR)CBO MPS6714 MPS6715 V(BR)EBO ICBO — — — 0.1 0.1 0.1 µAdc 40 50 5.0 — — — Vdc µAdc 30 40 — — Vdc Vdc v 30 ms; Duty Cycle v 2.0%. Motorola Small–Signal Transistors, FETs and ...