2SC5809 Datasheet PDF Download, Panasonic Semiconductor





(PDF) 2SC5809 Datasheet Download

Part Number 2SC5809
Description Silicon NPN triple diffusion planar type Transistor
Manufacture Panasonic Semiconductor
Total Page 3 Pages
PDF Download Download 2SC5809 Datasheet PDF

Features: Power Transistors 2SC5809 Silicon NPN t riple diffusion planar type Unit: mm F or high breakdown voltage high-speed sw itching ■ Features • High-speed swi tching (Fall time tf is short) • High collector-base voltage (Emitter open) VCBO • Low collector-emitter saturati on voltage VCE(sat) • TO-220D built-i n: Excellent package with withstand vol tage 5 kV guaranteed 9.9±0.3 3.0±0.5 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip 15.0±0.5 φ 3.2±0.1 1. 4±0.2 1.6±0.2 0.8±0.1 2.6±0.1 0.5 5±0.15 ■ Absolute Maximum Ratings T C = 25°C Parameter Collector-base volt age (Emitter open) Collector-emitter vo ltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power diss ipation Junction temperature Storage te mperature TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 800 500 8 3 6 30 2 150 −55 to +150 C °C Unit V V V A A W 2.54±0.30 5.0 8±0.50 1 2 3 1: Base 2: Collector 3: Emitter TO-220D-A1 Package Marking Symbol: C5809 Internal .

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Power Transistors
2SC5809
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
Features
High-speed switching (Fall time tf is short)
High collector-base voltage (Emitter open) VCBO
Low collector-emitter saturation voltage VCE(sat)
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
φ 3.2±0.1
1.4±0.2
1.6±0.2
2.6±0.1
0.8±0.1
0.55±0.15
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
800
500
8
3
6
30
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5809
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 800 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 3 A
IC = 3 A, IB = 0.6 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 3.0 A, Resistance loaded
IB1 = 0.6 A, IB2 = − 0.6 A
VCC = 200 V
500 V
100 µA
100 µA
15
8
0.3 0.6
V
8 MHz
1.1 µs
2.0 µs
0.3 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00291AED
1

        






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