type Transistor. 2SC5809 Datasheet

2SC5809 Transistor. Datasheet pdf. Equivalent

Part 2SC5809
Description Silicon NPN triple diffusion planar type Transistor
Feature Power Transistors 2SC5809 Silicon NPN triple diffusion planar type Unit: mm For high breakdown vol.
Manufacture Panasonic Semiconductor
Datasheet
Download 2SC5809 Datasheet

Power Transistors 2SC5809 Silicon NPN triple diffusion plan 2SC5809 Datasheet
Recommendation Recommendation Datasheet 2SC5809 Datasheet





2SC5809
Power Transistors
2SC5809
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
Features
High-speed switching (Fall time tf is short)
High collector-base voltage (Emitter open) VCBO
Low collector-emitter saturation voltage VCE(sat)
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
φ 3.2±0.1
1.4±0.2
1.6±0.2
2.6±0.1
0.8±0.1
0.55±0.15
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
800
500
8
3
6
30
2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Marking Symbol: C5809
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 800 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 5 V, IC = 3 A
IC = 3 A, IB = 0.6 A
VCE = 10 V, IC = 0.5 A, f = 1 MHz
IC = 3.0 A, Resistance loaded
IB1 = 0.6 A, IB2 = − 0.6 A
VCC = 200 V
500 V
100 µA
100 µA
15
8
0.3 0.6
V
8 MHz
1.1 µs
2.0 µs
0.3 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
SJD00291AED
1



2SC5809
2SC5809
35
(1)
30
25
PC Ta
(1) TC = Ta
(2) With a 100 × 100 × 2 mm
Al heat sink
(3) Without heat sink
20
15
(2)
10
5
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
100
Non repetitive pulse
TC = 25°C
10 ICP
IC
1
t=1s
t = 1 ms
t = 10 ms
0.1
0.01
1
10 100 1 000
Collector-emitter voltage VCE (V)
Rth t
1 000 Ta = 25°C
100
(1)
10 (2)
1
0.1
0.001
0.01
(1) Without heat sink
(2) With a Al heat sink 10 × 10 × 2 mm
0.1 1 10 100 1 000
Time t (s)
2 SJD00291AED





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