Semiconductor
STC945
NPN Silicon Transistor
Description
• General small signal amplifier
Features
• Low collector sat...
Semiconductor
STC945
NPN Silicon
Transistor
Description
General small signal amplifier
Features
Low collector saturation voltage : VCE(sat)=0.25V(Max.) Low output capacitance : Cob=2pF(Typ.) Complementary pair with STA733
Ordering Information
Type NO. STC945 Marking STC945 Package Code TO-92
Outline Dimensions
3.45±0.1 4.5±0.1 2.25±0.1
unit : mm
4.5±0.1
0.4±0.02
2.06±0.1
14.0±0.40
1.27 Typ. 2.54 Typ.
1 2 3
1.20±0.1
PIN Connections 1. Emitter 2. Collector 3. Base
0.38
KST-9075-000
1
STC945
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
50 40 5 150 625 150 -55~150
Unit
V V V mA mW °C °C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistion frequency Collector output capacitance Noise figure
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE* VCE(sat) fT Cob NF
Test Condition
IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ
Min. Typ. Max.
50 40 5 70 80 2 0.1 0.1 700 0.25 3.5 10
Unit
V V V µA µA V MHz pF dB
* : hFE rank / O : 70 ~...