2SA614 Datasheet: TO-220 Power Package Transistors





2SA614 TO-220 Power Package Transistors Datasheet

Part Number 2SA614
Description TO-220 Power Package Transistors
Manufacture Continental Device India
Total Page 2 Pages
PDF Download Download 2SA614 Datasheet PDF

Features: INCHANGE Semiconductor isc Product Spec ification isc Silicon PNP Power Transi stor 2SA614 DESCRIPTION ·Collector-E mitter Breakdown Voltage: V(BR)CEO= -55 V (Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= -0.5V (Max.)@ IC= - 1A ·Collector Power Dissipation: PC= 2 5W@ TC= 25℃ APPLICATIONS ·Designed for medium power amplifier applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S YMBOL VCBO Collector-Base Voltage VC EO Collector-Emitter Voltage w w PARA METER s c s i . w VALUE -80 -55 -5 -3 25 UNIT n c . i m e V V VEBO Emit ter-Base Voltage V IC Collector Curr ent-Continuous A PC Collector Power Dissipation W TJ Junction Temperatur e 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www. iscsemi.cn www.DataSheet.in INCHANGE Semiconductor isc Product Specificatio n isc Silicon PNP Power Transistor ELE CTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER C ONDITIONS MIN TYP. 2SA614 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Vo.

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA614
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -55V (Min.)
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.5V (Max.)@ IC= -1A
·Collector Power Dissipation-
: PC= 25W@ TC= 25
APPLICATIONS
·Designed for medium power amplifier applications.
i.cnABSOLUTE MAXIMUM RATINGS(Ta=25)
.iscsemSYMBOL
PARAMETER
VALUE UNIT
wwwVCBO Collector-Base Voltage
-80 V
VCEO Collector-Emitter Voltage
-55 V
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-3 A
PC Collector Power Dissipation
25 W
TJ Junction Temperature
150
Tstg Storage Temperature Range
-55~150
isc Websitewww.iscsemi.cn
www.DataSheet.in

     






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