GT10J303. 10J303 Datasheet

10J303 GT10J303. Datasheet pdf. Equivalent

Part 10J303
Description GT10J303
Feature www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10.
Manufacture Toshiba
Datasheet
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www.DataSheet.co.kr GT10J303 TOSHIBA INSULATED GATE BIPOLAR 10J303 Datasheet
Recommendation Recommendation Datasheet 10J303 Datasheet





10J303
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GT10J303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J303
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed
: tf = 0.30μs (Max.) (IC = 10A)
z Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorEmitter Voltage
Gate-Emitter Voltage
Collector Current
EmitterCollector Forward
Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
600
±20
10
20
10
20
30
150
55~150
V
V
A
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1C
Weight:
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
10J303
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-10-31
Datasheet pdf - http://www.DataSheet4U.net/



10J303
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
GT10J303
CHARACTERISTIC
SYMBOL
TEST CONDITION
Gate Leakage Current
Collector CutOff Current
Gate-Emitter CutOff Voltage
CollectorEmitter Saturation Voltage
Input Capacitance
Rise Time
Switching Time
TurnOn Time
Fall Time
TurnOff Time
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance (IGBT)
Thermal Resistance (Diode)
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
tr
ton
tf
toff
VF
trr
Rth (j-c)
Rth (j-c)
VGE = ±20V, VCE = 0
VCE = 600V, VGE = 0
IC = 1mA, VCE = 5V
IC = 10A, VGE = 15V
VCE = 20V, VGE = 0, f = 1MHz
Inductive Load
VCC = 300V, IC = 10A
VGG = ±15V, RG = 100
(Note 1)
IF = 10A, VGE = 0
IF = 10A, di / dt = 100A / μs
Note 1: Switching time measurement circuit and input / output waveforms
MIN TYP. MAX UNIT
― ― ±500 nA
― ― 1.0 mA
5.0 8.0 V
2.1 2.7 V
720
pF
0.12
0.40
μs
0.15 0.30
0.50
― ― 2.0 V
― ― 200 ns
― ― 4.17 °C / W
― ― 4.9 °C / W
Switching loss measurement waveforms
2 2006-10-31
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