10J303 Datasheet: GT10J303





10J303 GT10J303 Datasheet

Part Number 10J303
Description GT10J303
Manufacture Toshiba
Total Page 7 Pages
PDF Download Download 10J303 Datasheet PDF

Features: www.DataSheet.co.kr GT10J303 TOSHIBA IN SULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 HIGH POWER SW ITCHING APPLICATIONS MOTOR CONTROL APPL ICATIONS z Third-generation IGBT z Enha ncement mode type z High speed z Low sa turation voltage : tf = 0.30μs (Max.) (IC = 10A) : VCE (sat) = 2.7V (Max.) (I C = 10A) Unit: mm z FRD included betwe en emitter and collector ABSOLUTE MAXI MUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitt er Voltage Collector Current Emitter− Collector Forward Current Collector Pow er Dissipation (Tc = 25°C) Junction Te mperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF I FM PC Tj Tstg RATING 600 ±20 10 20 10 20 30 150 −55~150 UNIT V V A A A A W °C °C JEDEC JEITA TOSHIBA Weight: ⎯ 2-10R1C g (typ.) Note: Using co ntinuously under heavy loads (e.g. the application of high temperature/current /voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability signif.

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www.DataSheet.co.kr
GT10J303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT10J303
HIGH POWER SWITCHING APPLICATIONS
MOTOR CONTROL APPLICATIONS
Unit: mm
z Third-generation IGBT
z Enhancement mode type
z High speed
: tf = 0.30μs (Max.) (IC = 10A)
z Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 10A)
z FRD included between emitter and collector
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
CollectorEmitter Voltage
Gate-Emitter Voltage
Collector Current
EmitterCollector Forward
Current
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature Range
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
600
±20
10
20
10
20
30
150
55~150
V
V
A
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1C
Weight:
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
EQUIVALENT CIRCUIT
MARKING
10J303
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-10-31
Datasheet pdf - http://www.DataSheet4U.net/

                    






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