RB531XN

RB531XN Diodes Schottky barrier diode RB531XN !Applications Rectifying small power !External dimensions (Unit : mm) 2.0±0.2 1.3±0.1 0.65 0.65 0.9±0.1 0.7 0.1Min. 1.25±0.1 2.1±0.1 (4) (5) !Construction Silicon epitaxial planar ROHM : UMD6 EIAJ : SOT-363 JEDEC : !Absolute maximum ratings (Ta=25°C) Parameter DC reverse voltage Mean rectifying current ∗1 Peak forward surge curren ∗2 Junction temperature Storage temperature ∗1 Rating of per diode. ∗2 60Hz for 1 Symbol VR IO IFSM Tj Tstg Limits 30 100 1 125 −40 to +125 Unit V mA A °C °C !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. − − − Max. 0.300 0.430 20 Unit V V µA IF=10mA IF=100mA VR=10V Note) Please pay attention to static electricity when handling. 3K (6) !Features 1) Small mold type. (UMD6) 2) High reliability. K K K (3) (2) (1) (3) (2) (1) 0∼0.1 (4) (5) (6) A A A 0.2 +0.1 −0.05 0.15±0.05 Conditions 1/2 RB531XN Diodes !Electrical characteristic curves (Ta=25°C) 1 10m 1m REVERSE CURRENT : IR (A) 100 FORWARD CURRENT : IF (A) 100m 10m 1m 100µ 10µ 1µ 0 125°C 75°C 12 5° 75 C °C 25 °C 100µ 10µ 1µ 100n TERMINAL CAPACITANCE : CT (pF) −2 5°C 25°C 10 −25°C 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 2/...