MTD3055VL

MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage – Continuous – Single Pulse (tp ≤ 50 ms) Drain Current – Continuous @ 25°C Drain Current – Continuous @ 100°C Drain Current – Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Thermal Resistance – Junction to Case – Junction to Ambient – Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ±15 ± 20 12 8.0 42 48 0.32 1.75 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts 4 1 2 3 ...