2SC5855 Datasheet: Silicon NPN Triple Diffused Planar Transistor





2SC5855 Silicon NPN Triple Diffused Planar Transistor Datasheet

Part Number 2SC5855
Description Silicon NPN Triple Diffused Planar Transistor
Manufacture Toshiba
Total Page 5 Pages
PDF Download Download 2SC5855 Datasheet PDF

Features: 2SC5855 TOSHIBA TRANSISTOR SILICON NPN T RIPLE DIFFUSED MESA TYPE 2SC5855 HORIZ ONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV, DIGITAL T V HIGH SPEED SWITCHING APPLICATIONS Hig h Voltage Low Saturation Voltage High S peed : VCBO = 1500 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 µs (typ.) Unit: mm MAXIMUM RATINGS (Tc = 25°C) CHARACTE RISTIC Collector−Base Voltage Collect or−Emitter Voltage Emitter−Base Vol tage Collector Current Base Current Col lector Power Dissipation Junction Tempe rature Storage Temperature Range DC Pul se SYMBOL VCBO VCEO VEBO IC ICP IB PC T j Tstg RATING 1500 700 5 10 20 5 50 150 −55~150 UNIT V V V A A W °C °C JE DEC JEITA TOSHIBA ― ― 2-16E3A Wei ght: 5.5 g (typ.) ELECTRICAL CHARACTER ISTICS (Tc = 25°C) CHARACTERISTIC Coll ector Cut−off Current Emitter Cut−o ff Current Collector − Emitter Breakd own Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3 ) Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage Transition Freq.

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2SC5855
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
2SC5855
HORIZONTAL DEFLECTION OUTPUT FOR
SUPER HIGH RESOLUTION
DISPLAY, COLOR TV, DIGITAL TV
HIGH SPEED SWITCHING APPLICATIONS
Unit: mm
High Voltage
Low Saturation Voltage
High Speed
: VCBO = 1500 V
: VCE (sat) = 3 V (max)
: tf(2) = 0.1 µs (typ.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
CollectorBase Voltage
CollectorEmitter Voltage
EmitterBase Voltage
Collector Current
DC
Pulse
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
RATING
1500
700
5
10
20
5
50
150
55~150
UNIT
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Breakdown Voltage
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Storage Time
Switching Time
Fall Time
Storage Time
Fall Time
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
hFE (3)
VCE (sat)
VBE (sat)
fT
Cob
tstg(1)
tf(1)
tstg(2)
tf(2)
VCB = 1500 V, IE = 0
VEB = 5 V, IC = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 A
VCE = 5 V, IC = 6 A
VCE = 5 V, IC = 8 A
IC = 8 A, IB = 2 A
IC = 8 A, IB = 2 A
VCE = 10 V, IC = 0.1 A
VCB = 10 V, IE = 0, f = 1 MHz
ICP = 6 , IB1 (end) = 0.8 A
fH = 32 kHz
ICP = 5.5 A, IB1 (end) = 0.8 A
fH = 80 kHz
Min Typ. Max UNIT
――
1 mA
― ― 100 µA
700
V
28 60
6.2 10
4.3 6.7
――
3
V
1.0 1.4
V
2 MHz
120
pF
2.8
0.2
µs
2.3
0.1
µs
1 2004-5-18

              






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