Document
IRIS-A6372
Features
• Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. • Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. • Low start-up circuit current (50uA max) • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load • Avalanche energy guaranteed MOSFET with high VDSS • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. • No VDSS de-rating is required. • Built-in constant voltage drive circuit • Various kinds of protection functions • Pulse-by-pulse Overcurrent Protection (OCP) • Overvoltage Protection with latch mode (OVP) • Thermal Shutdown with latch mode (TSD)
Type
INTEGRATED SWITCHER
Package Outline
8 Lead PDIP
Key Specifications
MOSFET VDSS(V) 900 RDS(ON) MAX 7.7Ω AC input(V) 230±15% IRIS-A6372 85 to 264 Pout(W) Note 1 6 4
Descriptions
IRIS-A6372 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
STR-A6372
1 2 3 4 8 7 6 5
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IRIS-A6372
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol IDpeak IDMAX
Definition Drain Current *1 Maximum switching current *5
Terminals Max. Ratings 8 1.18 8 1.18
Units A A
EAS Vin Vth P D1 P D2 TF Top Tstg Tch
Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature
8-1 3-2 4-2 8-1 3-2 -
24.9 35 6 1.35 0.14 -20 ~ +125 -20 ~ +125 -40 ~ +125 150
mJ V V W W ℃ ℃ ℃ ℃
Note Single Pulse V1-2=0.82V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=1.18A
*6 Specified by Vin×Iin
Refer to recommended operating temperature
*1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown.